N-Channel Power MOSFET, 200V Drain-Source Voltage, 18A Continuous Drain Current, and 0.18ohm Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 130W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 36ns fall time.
PackageD2PAK
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF640STRL technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
180mR
RoHS Compliant
No
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF640STRL Datasheet
Download the complete datasheet for Vishay IRF640STRL to view detailed technical specifications.
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