
N-Channel Power MOSFET, 200V Drain-Source Voltage, 18A Continuous Drain Current, and 0.18ohm Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 130W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 36ns fall time.
Vishay IRF640STRL technical specifications.
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