
N-Channel Power MOSFET, D2PAK package, featuring a 200V drain-source voltage and 18A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.18-ohm drain-to-source resistance. With a maximum power dissipation of 130W and operating temperatures from -55°C to 150°C, it is designed for surface mounting. Key switching characteristics include a 14ns turn-on delay and 36ns fall time.
Vishay IRF640STRR technical specifications.
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