N-Channel Power MOSFET, D2PAK package, featuring a 200V drain-source voltage and 18A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.18-ohm drain-to-source resistance. With a maximum power dissipation of 130W and operating temperatures from -55°C to 150°C, it is designed for surface mounting. Key switching characteristics include a 14ns turn-on delay and 36ns fall time.
PackageD2PAK
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF640STRR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
180mR
RoHS Compliant
No
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF640STRR Datasheet
Download the complete datasheet for Vishay IRF640STRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
