N-Channel Power MOSFET featuring a 250V drain-source voltage and 14A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.24ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 150W. Key switching characteristics include a 10ns turn-on delay and 17ns fall time.
PackageTO-220-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.06nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Rds On Max
240mR
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
250V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF644N Datasheet
Download the complete datasheet for Vishay IRF644N to view detailed technical specifications.
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