Vishay
IRF644NLPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644NLPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.06nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
240mR
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.084199oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF644NLPBF Datasheet
Download the complete datasheet for Vishay IRF644NLPBF to view detailed technical specifications.
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