Vishay
IRF644NPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF644NPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.06nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
240mR
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF644NPBF Datasheet
Download the complete datasheet for Vishay IRF644NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.