
N-Channel Power MOSFET, 250V Vds, 14A Continuous Drain Current, 0.24 ohm Rds On. This silicon metal-oxide semiconductor FET features a TO-263-3 surface mount package, ideal for demanding applications. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C, it offers robust performance. Key switching characteristics include a 10ns turn-on delay and 17ns fall time, supported by a 20V gate-source voltage rating.
Vishay IRF644NSPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 250V |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF644NSPBF to view detailed technical specifications.
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