N-Channel Power MOSFET, 250V Vds, 14A Continuous Drain Current, 0.24 ohm Rds On. This silicon metal-oxide semiconductor FET features a TO-263-3 surface mount package, ideal for demanding applications. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C, it offers robust performance. Key switching characteristics include a 10ns turn-on delay and 17ns fall time, supported by a 20V gate-source voltage rating.
PackageTO-263-3
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644NSPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.06nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
240mR
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF644NSPBF Datasheet
Download the complete datasheet for Vishay IRF644NSPBF to view detailed technical specifications.
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