Vishay
IRF644NSTRL
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644NSTRL technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.06nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
240mR
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF644NSTRL Datasheet
Download the complete datasheet for Vishay IRF644NSTRL to view detailed technical specifications.
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