Vishay
IRF644NSTRRPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263-3
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF644NSTRRPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF644NSTRRPBF Datasheet
Download the complete datasheet for Vishay IRF644NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.