Vishay
IRF644NSTRRPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263-3
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644NSTRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF644NSTRRPBF Datasheet
Download the complete datasheet for Vishay IRF644NSTRRPBF to view detailed technical specifications.
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