IRF644S

N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 14A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 0.28-ohm drain-source resistance. Designed for surface mounting in a TO-263-3 package, it boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 1.3nF input capacitance, 11ns turn-on delay, and 49ns fall time.