N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 14A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 0.28-ohm drain-source resistance. Designed for surface mounting in a TO-263-3 package, it boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 1.3nF input capacitance, 11ns turn-on delay, and 49ns fall time.
PackageTO-263-3
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 280mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 250V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF644S Datasheet
Download the complete datasheet for Vishay IRF644S to view detailed technical specifications.
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