N-channel power MOSFET featuring 250V drain-source voltage and 14A continuous drain current. Surface mountable in a TO-263-3 package, this silicon Metal-oxide Semiconductor FET offers a low 280mΩ drain-source on-resistance. Key electrical characteristics include a 4V threshold voltage, 1.3nF input capacitance, and fast switching times with a 11ns turn-on delay. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 3.1W.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644SPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 280MR |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF644SPBF Datasheet
Download the complete datasheet for Vishay IRF644SPBF to view detailed technical specifications.
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