N-Channel Power MOSFET, surface mount, featuring 250V drain-source voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.28ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 125W. Operating across a temperature range of -55°C to 150°C, it includes fast switching characteristics with a 11ns turn-on delay and 49ns fall time. Packaged in a TO-263-3 (SMD-220) for tape and reel distribution.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644STRL technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
250V
Fall Time
49ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
280mR
RoHS Compliant
No
Turn-Off Delay Time
53ns
Turn-On Delay Time
11ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF644STRL Datasheet
Download the complete datasheet for Vishay IRF644STRL to view detailed technical specifications.
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