N-Channel Power MOSFET, 250V Drain-Source Voltage, 14A Continuous Drain Current, and 280mΩ Drain-Source Resistance. Features include a 1.3nF input capacitance, 49ns fall time, and 53ns turn-off delay. This silicon Metal-oxide Semiconductor FET is designed for surface mounting in a TO-263-3 (D2PAK-3) package, operating from -55°C to 150°C with a maximum power dissipation of 3.1W. It is RoHS compliant and supplied on tape and reel.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF644STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF644STRRPBF Datasheet
Download the complete datasheet for Vishay IRF644STRRPBF to view detailed technical specifications.
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