
N-channel power MOSFET featuring 400V drain-source breakdown voltage (Vdss) and a continuous drain current (ID) of 2A. This through-hole component offers a low on-resistance (Rds On Max) of 3.6 Ohms and a maximum power dissipation of 36W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include an 8ns turn-on delay and an 11ns fall time.
Vishay IRF710 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 170pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 400V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRF710 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
