N-channel power MOSFET featuring 400V drain-source breakdown voltage (Vdss) and a continuous drain current (ID) of 2A. This through-hole component offers a low on-resistance (Rds On Max) of 3.6 Ohms and a maximum power dissipation of 36W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include an 8ns turn-on delay and an 11ns fall time.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF710 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.6R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
DC Rated Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF710 Datasheet
Download the complete datasheet for Vishay IRF710 to view detailed technical specifications.
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