N-Channel Power MOSFET, 400V Vdss, 2A continuous drain current, and 3.6 Ohm Rds On. Features include 11ns fall time, 8ns turn-on delay, and 21ns turn-off delay. This silicon metal-oxide semiconductor FET offers 170pF input capacitance and a threshold voltage of 4V. Packaged in a lead-free TO-263AB (D2PAK) surface-mount package, it operates from -55°C to 150°C with a maximum power dissipation of 3.1W.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRF710SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 3.6R |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF710SPBF Datasheet
Download the complete datasheet for Vishay IRF710SPBF to view detailed technical specifications.
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