N-Channel Power MOSFET, 400V Drain-Source Voltage, 2A Continuous Drain Current, 3.6 Ohm Drain-Source Resistance. Features 8ns turn-on delay, 21ns turn-off delay, and 11ns fall time. Packaged in a TO-263-3 surface mount package, this silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 3.1W and operates from -55°C to 150°C. RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF710STRLPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 170pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF710STRLPBF Datasheet
Download the complete datasheet for Vishay IRF710STRLPBF to view detailed technical specifications.
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