N-Channel Power MOSFET featuring 400V drain-source voltage and 3.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.8 ohm drain-source resistance. Designed for through-hole mounting in a TO-262-3 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 50W. Key switching characteristics include a 10ns turn-on delay and 30ns turn-off delay.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF720LPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF720LPBF Datasheet
Download the complete datasheet for Vishay IRF720LPBF to view detailed technical specifications.
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