
N-Channel Power MOSFET, TO-220AB package, featuring 400V drain-source breakdown voltage and 3.3A continuous drain current. Offers a low 1.8 ohm drain-source on-resistance and 50W maximum power dissipation. Designed for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and is RoHS compliant. Key electrical characteristics include a 4V threshold voltage and 13ns fall time.
Vishay IRF720PBF technical specifications.
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