N-Channel Power MOSFET, TO-220AB package, featuring 400V drain-source breakdown voltage and 3.3A continuous drain current. Offers a low 1.8 ohm drain-source on-resistance and 50W maximum power dissipation. Designed for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and is RoHS compliant. Key electrical characteristics include a 4V threshold voltage and 13ns fall time.
PackageTO-220AB
Voltage400V
Current33A
MountingThrough Hole
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Technical Specifications
Vishay IRF720PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
3.3A
Current
33A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1.8R
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
410pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF720PBF Datasheet
Download the complete datasheet for Vishay IRF720PBF to view detailed technical specifications.
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