N-Channel Power MOSFET, 400V Vds, 3.3A Continuous Drain Current, 1.8 Ohm Rds On. Features 10ns turn-on delay, 30ns turn-off delay, and 13ns fall time. This silicon metal-oxide semiconductor FET is packaged in a D2PAK (TO-263AB) surface-mount case with 3 pins. Maximum power dissipation is 50W, with operating temperatures from -55°C to 150°C.
PackageD2PAK
Current Rating3.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF720S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
3.3A
Current Rating
3.3A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
410pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF720S Datasheet
Download the complete datasheet for Vishay IRF720S to view detailed technical specifications.
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