N-Channel Power MOSFET, featuring a 400V drain-to-source breakdown voltage and 5.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 74W. Key switching characteristics include a 10ns turn-on delay and a 14ns fall time.
PackageTO-220AB
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 700pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 400V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRF730 Datasheet
Download the complete datasheet for Vishay IRF730 to view detailed technical specifications.
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