N-Channel Power MOSFET, featuring a 400V drain-to-source breakdown voltage and 5.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 74W. Key switching characteristics include a 10ns turn-on delay and a 14ns fall time.
PackageTO-220AB
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
700pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
74W
Radiation Hardening
No
Rds On Max
1R
RoHS Compliant
No
Turn-Off Delay Time
38ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF730 Datasheet
Download the complete datasheet for Vishay IRF730 to view detailed technical specifications.
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