N-Channel MOSFET, TO-220-3 package, featuring 400V drain-source voltage and 5.5A continuous drain current. Offers 1 ohm drain-source resistance (Rds On Max) and 74W maximum power dissipation. Designed for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a gate-to-source voltage rating of 30V. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 16ns.
PackageTO-220-3
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
600pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF730A Datasheet
Download the complete datasheet for Vishay IRF730A to view detailed technical specifications.
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