N-Channel Power MOSFET, TO-220AB package, features 400V drain-source breakdown voltage and 5.5A continuous drain current. Offers a low 1-ohm drain-source on-resistance and 74W maximum power dissipation. Designed for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and includes a 4.5V nominal gate-source threshold voltage. RoHS compliant with a 3-pin configuration.
PackageTO-220AB
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730APBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1R
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
600pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Nominal Vgs
4.5V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
74W
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF730APBF Datasheet
Download the complete datasheet for Vishay IRF730APBF to view detailed technical specifications.
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