N-Channel Power MOSFET, 400V Vdss, 5.5A continuous drain current, and 1 ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package with a maximum power dissipation of 74W and an operating temperature range of -55°C to 150°C. Key electrical characteristics include a 4.5V threshold voltage, 600pF input capacitance, and switching times of 10ns turn-on delay, 16ns fall time, and 20ns turn-off delay. This component is ROHS compliant and designed for demanding power applications.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730ASPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.5A
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
600pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF730ASPBF Datasheet
Download the complete datasheet for Vishay IRF730ASPBF to view detailed technical specifications.
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