
N-Channel Power MOSFET, 400V Vdss, 5.5A continuous drain current, and 1 ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package with a maximum power dissipation of 74W and an operating temperature range of -55°C to 150°C. Key electrical characteristics include a 4.5V threshold voltage, 600pF input capacitance, and switching times of 10ns turn-on delay, 16ns fall time, and 20ns turn-off delay. This component is ROHS compliant and designed for demanding power applications.
Vishay IRF730ASPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF730ASPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
