N-Channel Power MOSFET, D2PAK package, featuring 400V drain-source voltage and 5.5A continuous drain current. Offers a low 1-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 74W. Designed for surface mounting with a tape and reel package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 10ns turn-on delay, 20ns turn-off delay, and 16ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730ASTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 600pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF730ASTRRPBF Datasheet
Download the complete datasheet for Vishay IRF730ASTRRPBF to view detailed technical specifications.
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