N-Channel Power MOSFET, D2PAK package, featuring 400V drain-source voltage and 5.5A continuous drain current. Offers a low 1-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 74W. Designed for surface mounting with a tape and reel package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 10ns turn-on delay, 20ns turn-off delay, and 16ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF730ASTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.5A
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
600pF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF730ASTRRPBF Datasheet
Download the complete datasheet for Vishay IRF730ASTRRPBF to view detailed technical specifications.
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