Vishay
IRF734PBF
Power Field-Effect Transistor, 4.9A I(D), 450V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PackageTO-220-3
Current Rating4.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF734PBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.9A
Current Rating
4.9A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
450V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
680pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.2R
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
DC Rated Voltage
450V
Compliance
RoHS
Compliant
Datasheet
Vishay IRF734PBF Datasheet
Download the complete datasheet for Vishay IRF734PBF to view detailed technical specifications.
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