Vishay
IRF737LC
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF737LC technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.1A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
300V
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
430pF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
750mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
6.6ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF737LC Datasheet
Download the complete datasheet for Vishay IRF737LC to view detailed technical specifications.
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