IRF740ASTRRPBF

N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current (ID), and 0.55 Ohm Max Drain-Source On-Resistance. Features include 10ns turn-on delay, 22ns fall time, and 24ns turn-off delay. This silicon Metal-Oxide-Semiconductor FET is housed in a D2PAK surface-mount package, offering a max power dissipation of 125W and operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.