N-Channel Power MOSFET, 400V Vdss, 10A continuous drain current. Features 0.55ohm maximum drain-source on-resistance and 125W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting. Includes 11ns turn-on delay and 25ns turn-off delay. RoHS compliant.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF740LCPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 550mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 400V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF740LCPBF Datasheet
Download the complete datasheet for Vishay IRF740LCPBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
