N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current, and 550mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1-element configuration and a D2PAK surface-mount package. It offers a max power dissipation of 125W, with turn-on delay time of 14ns and fall time of 24ns. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRF740STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 550mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF740STRLPBF Datasheet
Download the complete datasheet for Vishay IRF740STRLPBF to view detailed technical specifications.
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