N-Channel Power MOSFET, 400V Vdss, 10A continuous drain current, and 0.55ohm Rds On. This silicon, metal-oxide semiconductor FET features a surface mount TO-263-3 (D2PAK-3) package with a maximum power dissipation of 125W. Key switching characteristics include a 14ns turn-on delay and 24ns fall time, with an input capacitance of 1.4nF. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF740STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.4nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF740STRRPBF Datasheet
Download the complete datasheet for Vishay IRF740STRRPBF to view detailed technical specifications.
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