N-Channel Power MOSFET, 450V Drain-to-Source Voltage (Vdss) and 8.8A Continuous Drain Current (ID). Features 630mΩ Drain-to-Source Resistance (Rds On Max) and 125W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET utilizes a TO-220AB package for through-hole mounting. Includes 8.7ns turn-on delay, 27ns fall time, and 58ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF744 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Resistance | 630mR |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.4nF |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 630mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.7ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF744 Datasheet
Download the complete datasheet for Vishay IRF744 to view detailed technical specifications.
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