N-Channel Power MOSFET, 450V Drain-to-Source Voltage (Vdss) and 8.8A Continuous Drain Current (ID). Features 630mΩ Drain-to-Source Resistance (Rds On Max) and 125W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET utilizes a TO-220AB package for through-hole mounting. Includes 8.7ns turn-on delay, 27ns fall time, and 58ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF744 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
8.8A
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
450V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.4nF
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
630mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
58ns
Turn-On Delay Time
8.7ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF744 Datasheet
Download the complete datasheet for Vishay IRF744 to view detailed technical specifications.
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