N-Channel Power MOSFET, TO-220-3 package, featuring 500V drain-source voltage and 2.5A continuous drain current. Offers a low 3-ohm drain-source resistance. Operates with a nominal gate-source voltage of 4.5V and a maximum of 30V. Includes fast switching characteristics with turn-on delay of 8.1ns and fall time of 13ns. Maximum power dissipation is 50W, with an operating temperature range of -55°C to 150°C.
Vishay IRF820A technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 340pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRF820A to view detailed technical specifications.
No datasheet is available for this part.
