N-channel power MOSFET, 500V drain-source voltage, 2.5A continuous drain current, and 3-ohm drain-source on-resistance. Features include 13ns fall time, 16ns turn-off delay, and 8.1ns turn-on delay. This silicon metal-oxide semiconductor FET is housed in a TO-262-3 package for through-hole mounting. It operates from -55°C to 150°C with a maximum power dissipation of 50W.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF820ALPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF820ALPBF Datasheet
Download the complete datasheet for Vishay IRF820ALPBF to view detailed technical specifications.
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