N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source voltage and 2.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3-ohm drain-source on-resistance and 50W power dissipation. With a 4.5V nominal gate-source voltage and 340pF input capacitance, it provides fast switching characteristics with turn-on delay of 8.1ns and fall time of 13ns. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Vishay IRF820APBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 340pF |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF820APBF Datasheet
Download the complete datasheet for Vishay IRF820APBF to view detailed technical specifications.
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