N-Channel Power MOSFET, 500V Drain-Source Voltage, 5A Continuous Drain Current, and 1.4Ω Drain-Source Resistance. Features include 10ns turn-on delay, 15ns fall time, and 21ns turn-off delay. This single-element silicon FET offers a maximum power dissipation of 74W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF830AL technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
5A
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
500V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
9.65mm
Input Capacitance
620pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.4R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
10ns
Weight
0.084199oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF830AL Datasheet
Download the complete datasheet for Vishay IRF830AL to view detailed technical specifications.
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