N-Channel Power MOSFET featuring 500V Drain-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a maximum Drain-source On Resistance (Rds On) of 1.5Ω and a typical Drain to Source Resistance of 520mΩ. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 74W. Key switching characteristics include a 8.2ns turn-on delay and a 16ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF830LPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF830LPBF Datasheet
Download the complete datasheet for Vishay IRF830LPBF to view detailed technical specifications.
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