N-Channel Power MOSFET, 500V Drain-Source Voltage, 4.5A Continuous Drain Current, and 1.5 Ohm Drain-Source On-Resistance. Features include a 20V Gate-Source Voltage, 8.2ns Turn-On Delay Time, and 42ns Turn-Off Delay Time. This silicon Metal-Oxide-Semiconductor FET offers a maximum power dissipation of 74W and operates from -55°C to 150°C. Packaged in a TO-263-3 (D2PAK-3) surface-mount package, it is lead-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF830STRLPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF830STRLPBF Datasheet
Download the complete datasheet for Vishay IRF830STRLPBF to view detailed technical specifications.
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