N-Channel Power MOSFET with 500V Drain-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 0.85ohm Drain-to-Source On-Resistance (Rds On Max) and 125W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-262-3 package, suitable for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 11ns turn-on delay and 19ns fall time.
PackageTO-262-3
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF840AL technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
9.65mm
Input Capacitance
1.018nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
850mR
RoHS Compliant
No
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
DC Rated Voltage
500V
Weight
0.084199oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF840AL Datasheet
Download the complete datasheet for Vishay IRF840AL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
