IRF840AS

N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss), 8A Continuous Drain Current (ID), and 0.85 ohm Drain-to-Source Resistance (Rds On Max). This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package, 125W max power dissipation, and operates from -55°C to 150°C. Key switching characteristics include 11ns turn-on delay, 19ns fall time, and 26ns turn-off delay.