N-Channel Power MOSFET, 500V Drain-Source Voltage, 8A Continuous Drain Current, and 0.85 Ohm Max Drain-Source On Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-263AB (D2PAK-3) surface mount package with a maximum power dissipation of 3.1W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 11ns turn-on delay, 19ns fall time, and 26ns turn-off delay. Input capacitance is 1.018nF, and gate-source voltage is rated up to 30V. This RoHS compliant component is supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840ASTRLPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.018nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF840ASTRLPBF Datasheet
Download the complete datasheet for Vishay IRF840ASTRLPBF to view detailed technical specifications.
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