N-Channel MOSFET transistor for general-purpose applications. Features a 500V drain-to-source voltage (Vdss) and 8A continuous drain current (ID). Offers a low on-resistance (Rds On Max) of 850mΩ and a maximum power dissipation of 125W. Designed for through-hole mounting in a TO-262-3 package. Operates within a temperature range of -55°C to 150°C.
PackageTO-262-3
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
850mR
Turn-Off Delay Time
49ns
Turn-On Delay Time
14ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF840L Datasheet
Download the complete datasheet for Vishay IRF840L to view detailed technical specifications.
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