N-Channel MOSFET transistor for general-purpose applications. Features a 500V drain-to-source voltage (Vdss) and 8A continuous drain current (ID). Offers a low on-resistance (Rds On Max) of 850mΩ and a maximum power dissipation of 125W. Designed for through-hole mounting in a TO-262-3 package. Operates within a temperature range of -55°C to 150°C.
PackageTO-262-3
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840L technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 850mR |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF840L Datasheet
Download the complete datasheet for Vishay IRF840L to view detailed technical specifications.
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