N-Channel Power MOSFET with 500V Drain-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 0.85ohm Drain-to-Source On-Resistance (Rds On Max) and 125W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-262-3 package, suitable for through-hole mounting. Key switching characteristics include a 12ns turn-on delay and 19ns fall time. Operating temperature range is -55°C to 150°C.
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| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 850mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Weight | 0.084199oz |
| Width | 4.7mm |
| RoHS | Not Compliant |
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