N-channel power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers 0.85ohm drain-source resistance and 125W maximum power dissipation. Designed for surface mounting in a D2PAK-3 package, it operates from -55°C to 150°C with fast switching times including a 12ns turn-on delay. RoHS compliant and lead-free.
PackageTO-263AB
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840LCSTRRPBF technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.1nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF840LCSTRRPBF Datasheet
Download the complete datasheet for Vishay IRF840LCSTRRPBF to view detailed technical specifications.
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