N-channel power MOSFET with 500V drain-source voltage and 8A continuous drain current. Features 0.85 ohm drain-to-source resistance and 125W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in TO-263AB for surface mount and through-hole applications. RoHS compliant with 1.3nF input capacitance.
PackageTO-263AB
MountingSurface Mount, Through Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840LPBF technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.3nF |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount, Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF840LPBF Datasheet
Download the complete datasheet for Vishay IRF840LPBF to view detailed technical specifications.
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