N-Channel Power MOSFET, 500V Vdss, 8A Continuous Drain Current, 0.85ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK-3 package for surface mounting, with a maximum power dissipation of 125W and an operating temperature range of -55°C to 150°C. Key switching parameters include a 14ns turn-on delay and 20ns fall time. RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF840STRRPBF Datasheet
Download the complete datasheet for Vishay IRF840STRRPBF to view detailed technical specifications.
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