P-channel MOSFET, TO-220-3 package, featuring 100V drain-source breakdown voltage and 4A continuous drain current. Offers 1.2 ohm drain-source resistance (Rds On Max) and 43W maximum power dissipation. Operates across a temperature range of -55°C to 175°C, with fast switching times including 10ns turn-on delay and 17ns fall time. This through-hole mounted component has a gate-to-source voltage rating of 20V and input capacitance of 200pF.
PackageTO-220-3
Current Rating-4A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9510 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4A
Current Rating
-4A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
200pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
43W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-100V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRF9510 Datasheet
Download the complete datasheet for Vishay IRF9510 to view detailed technical specifications.
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