P-channel power MOSFET featuring 100V drain-source voltage and 4A continuous drain current. This surface-mount component offers a low 1.2Ω drain-source on-resistance and a maximum power dissipation of 3.7W. Designed with a TO-263 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 10ns turn-on delay and 15ns turn-off delay.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9510STRLPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9510STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9510STRLPBF to view detailed technical specifications.
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