Vishay
IRF9510STRRPBF
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9510STRRPBF technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF9510STRRPBF Datasheet
Download the complete datasheet for Vishay IRF9510STRRPBF to view detailed technical specifications.
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