P-channel MOSFET for power applications, featuring a 100V drain-source voltage and 6.8A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.6 ohm drain-source resistance and is packaged in a D2PAK surface-mount case. Key switching characteristics include a 9.6ns turn-on delay and 25ns fall time, with a maximum power dissipation of 60W.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9520STRL technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
6.8A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
390pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF9520STRL Datasheet
Download the complete datasheet for Vishay IRF9520STRL to view detailed technical specifications.
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