P-channel power MOSFET with 100V drain-source voltage and 12A continuous drain current. Features 300mΩ maximum drain-source on-resistance and 3.7W power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a D2PAK surface-mount case, this RoHS compliant component offers fast switching times with turn-on delay of 12ns and fall time of 39ns.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Power3.7W
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Technical Specifications
Vishay IRF9530STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
300mR
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
860pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
300mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
31ns
Turn-On Delay Time
12ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9530STRLPBF Datasheet
Download the complete datasheet for Vishay IRF9530STRLPBF to view detailed technical specifications.
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