P-channel MOSFET featuring 100V drain-source voltage and 12A continuous drain current. Offers 300mΩ drain-source resistance and 88W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET exhibits fast switching characteristics with a 12ns turn-on delay and 39ns fall time. Operating temperature range spans from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRF9530STRR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
100V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
860pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
300mR
RoHS Compliant
No
Turn-Off Delay Time
31ns
Turn-On Delay Time
12ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRF9530STRR Datasheet
Download the complete datasheet for Vishay IRF9530STRR to view detailed technical specifications.
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